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Hynix Semiconductor, the dynamic random access memory (DRAM) maker that has all chances to become the world’s largest, announced on Tuesday that its DDR3 memory chips have passed validation of Intel Corp., the main supplier of core-logic sets in the world.
Hynix’s newly-validated DDR3 products are 1Gb DDR3 SDRAM component manufactured using 80nm process technology as well as 1GB and 2GB DDR3 unbuffered-DIMMs. These devices operate at 800MHz with CL5 5-5 or CL6 6-6 latency settings and 1066MHz clock-speed with CL7 7-7 timings at 1.5V power supply.
So far Hynix is the only company to validate its DDR3 memory chips with Intel Corp. based on the lack of certified DDR3 products list at developer.intel.com web-site.
DDR3 memory is designed to increase performance and lower power consumption of DDR2 memory utilized today. The new memory standard features relatively low operating voltage of 1.5V, 8-bit pre-fetch architecture (compared to 4-bit pre-fetch buffer with DDR2), on-die termination (ODT), power-saving modes known as PASR (partial array self refresh) and ASR (auto self refresh) and some other capabilities.
The DDR3 memory will be able to operate at up to 1600MHz, but in the exchange for enhanced latencies of CAS (column address strobe) 5 to 10 (compared to CAS 3-6 on DDR2). Even though CL7 latency setting is considerably higher compared to CL5 of DDR2 at the same frequency, improved pre-fetch and other technical advantages of DDR3 versus DDR2 may help the new memory type to be as fast or even faster compared to the previous-gen one.
Mass production of the 1Gb DDR3 on the 80nm line will begin in the third quarter of this year to coincide with the launch of Intel 3-series code-named Bearlake chipsets that support the new memory standard. Hynix plans to manufacture the product on the new 66nm process beginning in late 2007.
Demand for DDR3 is expected to emerge towards the end of the year. According to market research firm iSuppli, DDR3 will account for 25% of total DRAM shipments by the end of 2008 and dominate the market by 2010.
