Elpida Introduces First 512Mb PC3200 DRAM Chips

by Anton Shilov
08/27/2003 | 06:00 PM

Despite of all memory market crises and rebounds the pace towards higher memory speeds and volumes does not slowdown at all. Memory companies continue to bring faster and higher-density DRAM devices into the market in order to satisfy growing needs of the industry and to continue the infinite progress of technologies. Elpida Memory announced the availability of its 512Mb PC3200 DDR SDRAM components and its 1GB unbuffered DIMMs with or without ECC support designed for high-density, high-speed desktop and workstation applications.

Elpida's new 512Mb DRAM devices are manufactured using Elpida’s 0.11 micron process technology at its 300mm fabrication facility in Hiroshima, Japan. The devices operate at 200MHz (400MHz DDR) and are organized as 64 million words x 8-bits in TSOP packages. Elpida’s devices achieve latency of 3-3-3 and 3-4-4.

New PC3200 DRAM devices from Elpida seem to be the industry’s first 512Mb chips made using 0.11 micron technology and able to run at 400MHz DDR speed. Earlier this year Samsung announced 512Mb and even 1Gb memory chips made using 0.10 micron technology, but only functioning at 266 or 333MHz DDR.

Elpida currently supplies unbuffered 1GB PC3200 DIMM modules for PC and workstation applications, build using 16 512Mb DRAM chips. Besides, the company also offers 1GB modules in an unbuffered, x72 configuration that supports Error Correction Code (ECC) for high-end workstation applications.