Chartered Semiconductor Manufacturing, one of the world’s leading c, on Thursday announced the extension of its joint development collaboration with IBM to include 22nm bulk complementary metal oxide semiconductor (CMOS) technology.

“At a time when our customers are just gaining access to the most innovative foundry process in the industry at 32nm, we can now assure them continued customer-centric solutions well into the next decade with 22nm,” said Liang-Choo ‘LC’ Hsia, senior vice president, technology development at Chartered.

The extension to 22nm builds on the original multi-year agreement that the two companies first signed in November 2002. Now in its sixth year, the collaborative development program has enabled Chartered to provide foundry access to a leading technology roadmap that leverages invention and innovation for manufacturing solutions, spanning five major generations of advanced process technology, including 90nm, 65nm, 45nm, 32nm, and now 22nm logic processes.

As with previous nodes, 22nm development activities will be conducted at IBM’s 300mm semiconductor fabrication facility in East Fishkill, N.Y. Each company will have the ability to implement the jointly developed processes in its own manufacturing facilities.

Financial terms of the new agreement were not disclosed.

“This news demonstrates that a long-term collaborative model for semiconductor research and development yields significant opportunities to improve application performance and cost. Going forward, it will be material science invention that will improve silicon performance while the collaborative model mitigates the escalating cost of technology and design and improves time to manufacture,” said Gary Patton, vice president, IBM semiconductor research and development center.